publication date : oct., 2011 1 < low noise gaas hemt > MGF4936AM 4pin flat lead package description the MGF4936AM super-low noise ingaas hemt (high electron mobility transistor) is designed for use in s to ku band amplifiers. the 4pin flat lead package is small-thin size, and offers high cost performance. features low noise figure @ f=12ghz nfmin. = 0.50db (typ.) high associated gain @ f=12ghz gs = 12.0db (typ.) application s to ku band low noise amplifiers quality grade gg recommended bias conditions v ds =2v , i d =7ma ordering information general part number: MGF4936AM-75 tape & reel 15000pcs/reel rohs compliant MGF4936AM is a rohs compliant product. rohs compliance is indicated by the letter ?g? after the lot marking. absolute maximum ratings (ta=25 ? c ) symbol parameter ratings unit v gdo gate to drain voltage -3 v v gso gate to source voltage -3 v i d drain current idss ma pt total power dissipation 50 mw t ch channel temperature 125 ? c t stg storage temperature -55 to +125 ? c electrical characteristics (ta=25 ? c ) symbol parameter test conditions limits unit min. typ. max v (br)gdo gate to drain breakdown voltage i g =-10 ? a -3.5 -- -- v i gss gate to source leakage current v gs =-2v,v ds =0v -- -- 50 ? a i dss saturated drain current v gs =0v,v ds =2v 12 -- 60 ma v gs(off) gate to source cut-off voltage v ds =2v,i d =500 ? a -0.1 -- -1.5 v gs associated gain v ds =2v, 11.0 12.0 -- db nfmin. minimum noise figure i d =7ma,f=12ghz -- 0.50 0.70 db note: gs and nfmin. are tested with sampling inspection. outline drawing fig.1 mitsubishi proprietary not to be reproduced or disclosed without permission by mitsubishi electric
< low noise gaas hemt> MGF4936AM 4pin flat lead package publication date : oct., 2011 2 0.30 0.11 1.25 2.05 2.10 (0.85) 0.49 +0.1 -0.05 0.1 0.30 -0.05 +0.1 -0.05 +0.1 +0.1 -0.05 -0 +0.05 0.1 0.1 0.05 (0.65) (0.65) 0.05 0.05 0.30 0.40 (0.65) (0.60) 1.30 1.25 (0.65) (0.60) 1.30 1.25 fig.1 top side bottom unit: mm gate source drain (gd-30) f
< low noise gaas hemt> MGF4936AM 4pin flat lead package publication date : oct., 2011 3 typical characteristics (ta=25c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 id (ma) nf (db) 0 2 4 6 8 10 12 14 16 gs (db) {vd=2v, f=12ghz} nf & gs vs. i d 0 10 20 30 40 50 -1 -0.5 0 gate to source voltage, v gs (v) drain current, id (ma) 0 10 20 30 40 50 01234 drain to source voltage, v ds (v) drain current, i d (ma) i d vs. v ds i d vs. v gs
< low noise gaas hemt> MGF4936AM 4pin flat lead package publication date : oct., 2011 4 s parameters (vds=2v, id=7ma, ta=25deg.c) freq. (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.998 -12.7 3.891 165.0 0.014 80.2 0.693 -10.5 2 0.978 -25.7 3.886 150.2 0.028 70.3 0.680 -21.1 3 0.950 -38.8 3.881 135.7 0.042 60.9 0.659 -31.7 4 0.908 -52.5 3.874 120.9 0.054 51.2 0.631 -42.5 5 0.856 -66.6 3.859 105.9 0.065 41.7 0.594 -53.5 6 0.794 -81.4 3.828 90.8 0.075 32.1 0.551 -64.6 7 0.730 -97.6 3.797 75.4 0.084 22.9 0.505 -76.7 8 0.654 -115.3 3.707 59.8 0.090 12.8 0.444 -89.5 9 0.579 -133.6 3.578 44.6 0.093 3.7 0.384 -101.9 10 0.513 -154.1 3.435 29.7 0.094 -5.1 0.322 -116.0 11 0.479 -174.3 3.313 15.5 0.095 -11.6 0.275 -131.1 12 0.449 163.9 3.154 1.7 0.092 -19.3 0.221 -147.1 13 0.462 142.5 3.038 -12.5 0.094 -24.7 0.195 -169.8 14 0.491 125.9 2.998 -26.3 0.092 -25.6 0.198 171.0 15 0.543 108.2 2.914 -41.3 0.095 -28.3 0.219 148.4 16 0.597 90.4 2.730 -57.1 0.105 -35.7 0.263 122.3 17 0.643 76.3 2.556 -73.0 0.110 -44.3 0.319 100.9 18 0.680 63.2 2.303 -87.8 0.115 -52.9 0.369 82.0 19 0.723 52.2 2.054 -100.4 0.115 -61.3 0.418 67.1 20 0.758 41.8 1.883 -112.9 0.118 -70.6 0.466 54.0 s22 s12 s11 s21 noise parameters freq. nfmin rn (ghz) (db) (mag) (ang) 6 0.20 0.75 47.6 0.23 7 0.25 0.68 62.4 0.19 8 0.29 0.61 78.8 0.15 9 0.34 0.54 96.9 0.12 10 0.38 0.48 116.4 0.08 11 0.43 0.42 137.2 0.05 12 0.47 0.38 159.4 0.04 13 0.52 0.35 -177.7 0.04 14 0.56 0.35 -153.9 0.06 15 0.61 0.36 -129.7 0.07 16 0.65 0.39 -105.2 0.12 17 0.70 0.45 -80.4 0.16 18 0.74 0.53 -55.3 0.23 note: rn is normarised by 50 ohm. opt 0 .3 5 0 . 4 30. 3 5 0 . 3 5 0.40 0 . 43 0 . 35 0 . 50 0.90 2.00 0.40 4-0.30th 0.55 reference point 2.5mm board: ? r=3.38 thickness: 0.5mm [foot pattern for measurement]
< low noise gaas hemt> MGF4936AM 4pin flat lead package publication date : oct., 2011 5 s parameters (vds=2v, id=10ma, ta=25deg.c) freq. (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 1 0.996 -13.4 4.971 164.1 0.013 80.2 0.638 -10.3 2 0.970 -27.0 4.929 148.5 0.026 71.3 0.623 -20.7 3 0.932 -40.5 4.872 133.1 0.038 62.1 0.601 -31.0 4 0.880 -54.6 4.799 117.8 0.050 53.1 0.571 -41.3 5 0.817 -68.8 4.702 102.5 0.060 44.3 0.534 -51.7 6 0.746 -83.6 4.585 87.3 0.069 36.0 0.492 -62.0 7 0.675 -99.8 4.471 72.0 0.078 27.6 0.446 -73.4 8 0.595 -117.2 4.295 56.8 0.085 18.5 0.388 -85.1 9 0.519 -135.5 4.089 42.2 0.089 10.2 0.333 -96.2 10 0.454 -155.9 3.890 27.9 0.092 2.0 0.272 -109.2 11 0.422 -176.2 3.724 14.5 0.096 -4.6 0.226 -123.1 12 0.395 161.6 3.532 1.3 0.095 -12.2 0.174 -137.9 13 0.413 140.3 3.399 -12.1 0.099 -18.7 0.143 -162.2 14 0.447 124.3 3.360 -25.2 0.101 -21.2 0.143 176.8 15 0.501 107.1 3.287 -39.6 0.104 -25.4 0.162 151.6 16 0.562 89.5 3.098 -55.0 0.113 -33.7 0.206 121.7 17 0.613 75.5 2.925 -70.5 0.118 -42.6 0.264 99.6 18 0.654 62.5 2.656 -85.3 0.123 -51.8 0.317 79.8 19 0.701 51.6 2.375 -97.9 0.123 -60.1 0.369 65.2 20 0.736 41.3 2.194 -110.2 0.124 -70.2 0.419 52.1 s22 s12 s11 s21 noise parameters freq. nfmin rn (ghz) (db) (mag) (ang) 6 0.190.7047.30.21 7 0.230.6362.40.18 8 0.280.5679.10.13 9 0.320.4997.60.10 10 0.37 0.43 117.4 0.07 11 0.41 0.38 138.7 0.06 12 0.46 0.34 161.3 0.05 13 0.51 0.32 -175.4 0.05 14 0.55 0.31 -151.3 0.06 15 0.60 0.33 -126.9 0.07 16 0.64 0.36 -102.3 0.11 17 0.69 0.42 -77.4 0.16 18 0.73 0.50 -52.3 0.22 note: rn is normarised by 50 ohm. opt note: we are ready to provide nonlinear model for ads and mwo users. if you are interested, please contact our sales
< low noise gaas hemt> MGF4936AM 4pin flat lead package publication date : oct., 2011 6 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! ? mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibilit y that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire ore property damage. remember to give due consideration to safety when making your circuit design s, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non -flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ? these materials are intended as a reference to assi st our customers in the se lection of the mitsubishi semiconductor product best suited to the customer?s application; they do not c onvey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electric corporation or a third party. ? mitsubishi electric corporation as sumes no responsibility for any damage, or infringement of any third- party?s rights, originating in the use of any product dat a, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. ? all information contained in these materials, in cluding product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mi tsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the la test product information before purchasing a product listed herein. the information described here may contain tech nical in accuracies or typographical errors. mitsubishi electric corporation assume s no responsibility for any damage, li ability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by mitsubishi electric corporation by various means, including the mitsubishi semiconductor home page (http://www.mitsubi shielectric.com/). ? when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the inform ation and products. mitsubishi electric corporation assumes no responsibility fo r any damage, liability or other loss resulting from the information contained herein. ? mitsubishi electric corporation semiconductors are not designed or manufactured for use in a device or system that is used under circum stances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, ae rospace, nuclear, or undersea repeater use. ? the prior written approval of mitsubishi electric corpor ation is necessary to reprint or reproduce in whole ore in part these materials. ? if these products or technologies are subject to th e japanese export control restrictions, they must be exported under a license from the japanese governm ent and cannot be imported into a country other than the approved destination. any diversion or re-export contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. ? please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor for further details on these ma terials or the products contained therein.
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